Study of forward AC stress degradation of GaN-on-Si Schottky diodes

International audienceForward AC stress and relaxation have been performed on GaN-on-Si Schottky diodes to study the shift of diode characteristics such as threshold voltage. Influence of frequency and length of first anode field plate are studied. PBTI measurement performed on HEMTs with gate similar to the first anode field plate rules out the degradation of the dielectric under the anode field plate and tends to prove that Schottky contact itself could be the cause of forward stress degradation

Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate

International audienceDynamic Ron measurements and substrate ramping characterization have been performed on GaN-based Schottky diodes and TLM test structures with different back barrier configurations. Parameters such as channel length, ramp rate and temperature have been tested to improve the understanding of back barrier screening effect on the device dynamic behavior

A Comprehensive Analysis of AlN spacer and AlGaN n-doping effects on the 2DEG Resistance in AlGaN/AlN/GaN Heterostructures

International audienceIn this paper, several epitaxial variations influencing the bi-dimensional electron gas (2DEG) are investigated. The effects of n-doped AlGaN barrier and AlN spacer thickness are studied by examining the sheet electron density (ns) and the mobility (µs) of the 2DEG using ID(VG) and C(VG) measurements, and 1D Schrödinger-Poisson (1DSP) simulations. Specifically, the correlations between the resistance, µs, ns and the polarization interface charges (σ) are studied. Besides the well-reported benefits of the AlN spacer on ns, we show that a thicker AlN spacer leads to larger ns due to the enhancement of the AlN polarization. In addition, we prove experimentally that an n-doped AlGaN barrier does not significantly improve the 2DEG density but leads to the formation of a second channel in the AlGaN barrier for negative gate voltage (VG≤0V), driving the overall improvement of the resistance

Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate

International audienceDynamic Ron measurements and substrate ramping characterization have been performed on GaN-based Schottky diodes and TLM test structures with different back barrier configurations. Parameters such as channel length, ramp rate and temperature have been tested to improve the understanding of back barrier screening effect on the device dynamic behavior

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT

International audienceFor the first time, ultrafast AC pBTI measurements are applied to GaN on Si E-mode MOSc-HEMT and compared to DC pBTI. Full recess Al$_2$ O$_3$ /GaN MOS gate is submitted to AC signals with various frequencies, duty factors and stress times. The degradation and relaxation characteristics are then modeled through a RC model combined to a CET map and fitted to experimental data. This map reveals the presence of two trap populations, also observed through $\Delta$Vth degradation kinetics. Acceleration factors (gate voltage and temperature) are estimated as well as TTF (Time to Failure) under AC conditions and show an extended lifetime compared to DC stress conditions. Finally dynamic variability is studied and indicates that our devices are ruled by normal distributions

Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

International audienceWe present significant performance enhancementsof AlGaN/GaN power Schottky diodes on 200 mm siliconsubstrates achieved by optimizing the anode fabrication and theepitaxial layers. 600V rated AlGaN/GaN power diodes using aMIS (Metal Insulator Semiconductor)-gated Schottky anode wereprocessed using a CMOS compatible process flow transferable tomass production environments. Turn-on voltages V$_T$ around 0.6V at 25°C, forward voltages V$_F$ lower than 1.6 V at 100 mA/mmand 25°C, reverse leakage currents IREV lower than 1 $\mu$A/mm at600 V and 150°C and excellent dynamic performances wereachieved and outperform state of the art 600V rated AlGaN/GaNSchottky diodes

Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT

International audienceThis is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain